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| HS-139RH Data Sheet May 1999 File Number 3573.2 Radiation Hardened Quad Voltage Comparator The Radiation Hardened HS-139RH consists of four independent single or dual supply voltage comparators on a single monolithic substrate. The common mode input voltage range includes ground, even when operated from a single supply, and the low supply current makes these comparators suitable for low power applications. These types were designed to directly interface with TTL and CMOS. The HS-139RH is fabricated on our dielectrically isolated Rad Hard Silicon Gate (RSG) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the HS-139RH are contained in SMD 5962-98613. A "hot-link" is provided on our homepage with instructions for downloading. www.intersil.com/spacedefense/newsafclasst.asp Features * QML Qualified Per MIL-PRF-38535 Requirements * Radiation Environment - Latch-up Free Under any Conditions - Total Dose (Max). . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU LET Threshold . . . . . . . . . . . . . . . 20MeV/cm2/mg - Low Dose Rate Effects Immunity * 100V Output Voltage Withstand Capability * ESD Protection to >3000V * Differential Input Voltage Range Equal to the Supply Voltage * Input Offset Voltage (VIO). . . . . . . . . . . . . . . . . 2mV (Max) * Quiescent Supply Current . . . . . . . . . . . . . . . . 2mA (Max) Applications * Pulse Generators * Timing Circuitry * Level Shifting * Analog to Digital Conversion Ordering Information ORDERING NUMBER 5962F9861301VCC 5962F9861301QCC HS1-139RH/Proto 5962F9861301VXC 5962F9861301QXC HS9-139RH/Proto INTERNAL MKT. NUMBER HS1-139RH-Q HS1-139RH-8 HS1-139RH/Proto HS9-139RH-Q HS9-139RH-8 HS9-139RH/Proto TEMP. RANGE (oC) -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125 Pinouts s HS-139RH (SBDIP CDIP2-T14) TOP VIEW OUT 2 1 OUT 1 2 V+ 3 - IN 1 4 + IN 1 5 - IN 2 6 + IN 2 7 14 OUT 3 13 OUT 4 12 GND 11 + IN 4 10 - IN 4 9 + IN 3 8 - IN 3 HS-139RH (FLATPACK CDFP3-F14) TOP VIEW OUT 2 OUT 1 V+ - IN 1 + IN 1 - IN 2 - IN 2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 OUT 3 OUT 4 GND + IN 4 - IN 4 + IN 3 - IN 3 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 HS-139RH Die Characteristics DIE DIMENSIONS: 3750m x 2820m (148 mils x 111 mils) 483m 25.4m (19 mils 1 mil) INTERFACE MATERIALS: Glassivation: Type: Silox (SiO2) Thickness: 8.0kA 1.0kA Top Metallization: Type: AlSiCu Thickness: 16.0kA 2kA Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 x 105 A/cm2 Transistor Count: 49 Metallization Mask Layout HS-139RH GND (12) +IN4 (11) -IN4 (10) OUT4 (13) +IN3 (9) OUT3 (14) -IN3 (8) +IN2 (7) OUT2 (1) -IN2 (6) OUT1 (2) V+ (3) -IN1 (4) +IN1 (5) All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 2 |
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